PART |
Description |
Maker |
M63832GP M63832KP |
7-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY
|
Mitsubishi Electric Semiconductor
|
M54587 M54587P M54587P/FP M54587FP |
8-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
|
Mitsubishi Electric Corporation
|
M63836FP M63836KP |
8-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE
|
Mitsubishi Electric Semiconductor
|
M54581P |
S-UNIT 500mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE From old datasheet system
|
Mitsubishi Electric Corporation Mitsubishi Electric Semiconductor
|
M54585KP |
Transistor Array 8-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE
|
Mitsubishi Electric Corporation Mitsubishi Electric Semiconductor
|
IR2C36 |
7-Unit 500mA Transistor Array
|
Sharp
|
M54583 M54583P M54583PNBSP |
From old datasheet system M54583P Darlington Transistor Array 8 UNIT 400MA DARLINGTON TRANSISTOR ARRAY
|
Mitsubishi Electric Corporation Mitsubishi Electronics America Inc Mitsubishi Electric Semiconductor
|
LB1272 |
6-Unit / Darlington Transistor Array 6-Unit, Darlington Transistor Array
|
Sanyo Electric Co.,Ltd. SANYO[Sanyo Semicon Device]
|
2N999 ST640 ST646 FT359 |
TRANSISTOR | BJT | DARLINGTON | NPN | 60V V(BR)CEO | 500MA I(C) | CAN TRANSISTOR | BJT | DARLINGTON | NPN | 60V V(BR)CEO | 10A I(C) | TO-3 TRANSISTOR | BJT | DARLINGTON | PNP | 80V V(BR)CEO | 10A I(C) | TO-3 晶体管|晶体管|达林顿|进步党| 80V的五(巴西)总裁| 10A条一(c)|3 TRANSISTOR | BJT | DARLINGTON | NPN | 350V V(BR)CEO | 15A I(C) | TO-3
|
STMicroelectronics N.V.
|